| 发明名称 |
SWITCHING DEVICE, REWRITABLE LOGIC INTEGRATED CIRCUIT, AND MEMORY DEVICE |
| 摘要 |
A switching device according to the present invention includes ion conductive layer 23 containing titanium oxide, first electrode 21 provided in contact with ion conductive layer 23, and second electrode 22 provided in contact with ion conductive layer 23 and which can supply metal ions to ion conductive layer 23.
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| 申请公布号 |
US2009034318(A1) |
申请公布日期 |
2009.02.05 |
| 申请号 |
US20070278611 |
申请日期 |
2007.02.06 |
| 申请人 |
NEC CORPORATION |
发明人 |
IGUCHI NORIYUKI |
| 分类号 |
G11C11/00;H01L25/00;H01L29/76 |
主分类号 |
G11C11/00 |
| 代理机构 |
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