METHOD OF FORMING A CONTACT IN A SEMICONDUCTOR DEVICE

摘要

A contact forming method of the semiconductor device is provided to expand the effective contact area between the storage node and the storage node contact on the semiconductor substrate provided regardless of the location of the source area or the drain region of transistor. A contact forming method of the semiconductor device comprises a step for forming insulating layers(124,132); a step for forming a mask(134); a step for forming an impurity region(138); a step for forming the contact hole; and a step for forming a contact. The insulating layer is formed on a substrate(100). Mask is formed on the insulating layer in order to partly expose the insulating layer. The impurity region is formed in the fixed region of the insulating layer through the mask. The contact hole is formed in the insulating layer in order to pass the impurity region.