METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for improving an interface characteristic between a semiconductor substrate and an insulating film.

SOLUTION: The method of manufacturing a semiconductor device includes: a step of depositing an N<->type silicon carbide epitaxial layer 2 adopting silicon carbide as a base material, and a gate insulating film 4 so as to be brought into contact with an N<+>type polycrystal silicon 3 which is brought into contact with one principal plane of the N<->type silicon carbide epitaxial layer 2 and adopts a polycrystal silicon 10 having a band gap different from the silicon carbide as a base material; and a step of forming an insulating film by heat-treating the gate insulating film 4 in an oxidized atmosphere after depositing the gate insulating film 4 and oxidizing the N<->type silicon carbide epitaxial layer 2 and the N<+>type polycrystal silicon 3.

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