发明名称 |
Thin film germanium diode with low reverse breakdown |
摘要 |
In fabricating an electronic structure, a substrate is provided, and a first barrier layer is provided on the substrate. A germanium thin film diode is provided on the first barrier layer, and a second barrier layer is provided on the germanium thin film diode. A memory device is provided over and connected to the second barrier layer.
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申请公布号 |
US7468296(B1) |
申请公布日期 |
2008.12.23 |
申请号 |
US20050290787 |
申请日期 |
2005.11.30 |
申请人 |
SPANSION LLC;ADVANCED MICRO DEVICES INC. |
发明人 |
ADEM ERCAN;BUYNOSKI MATTHEW;CHIU ROBERT;CHOO BRYAN;GABRIEL CALVIN;JEON JOONG;MATSUMOTO DAVID;SHIELDS JEFFREY;SINGH BHANWAR;STOCKWELL WINNY;YU WEN |
分类号 |
H01L21/8234;H01L27/10 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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