HIGHLY FUNCTIONAL Ga2O3 SINGLE CRYSTAL FILM AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To produce a highly functional Ga2O3single crystal thin film which can be used as a light source emitting light in a far ultraviolet region where the wavelength is 250-270 nm by a simple means.

SOLUTION: A β-Ga2O3single crystal wafer, prepared by utilizing an optical floating-zone melting method, is used as a substrate, and then a β-Ga2O3single crystal film is grown on the (100) plane of the substrate at a temperature of ≥800°C by a molecular beam epitaxy method.

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