MANUFACTURE OF PLASMA REACTOR AND SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To form an internal field without having the deterioration of the characteristics of noncrystaline film itself and to improve the characteristics of the photoelectromotive force of a noncrystalline Si film by a method wherein the flow of raw gas is varied without changing the inside pressure of the device. CONSTITUTION:The noncrystalline Si is formed by performing a glow discharge and by maintaining the substrate, having a transparent electrode film formed on a glass plate, at the temperature of approximately 300 deg.C using gas of SiH4 diluted with Ar and the like. When the rate of discharge for raw gas is varied by the controlling device while a plasma reaction is performed without changing the pressure inside the device, an internal field is provided in the noncrystalline film which was already formed, thereby enabling to improve release voltage and short-circuit density and the element having excellent characteristics can be obtained.