| 摘要 |
PURPOSE:To increase the integration of an integrated circuit by repeating a process forming an element, a process forming the film of an insulator and a process immersing a sample in a metal ion solution and also a process forming metal layers at contact holes. CONSTITUTION:A first layer element 2, isolation section 6, wiring 4 and inter layer insulating film 3 are formed on the surface of a substrate 1 by selective etching, film formation and impurity diffusion techniques or the like. An isulating film 7 such as polyimide is formed on the wiring 4 on the first layer. Contact holes 8 are formed at the desired places of the film 7. Metal layers 11 are formed at the holes 8 by immersing a formed sample in a metal ion solution and by applying laser light to the holes 8. A second layer substrate 12 is selectively formed at the part except the metal layers 11. A second layer element 13, isolation section, wiring 15 and inter layer insulating film 14 are formed on the surface of the second layer substrate 12 by selective etching, film formation and impurity diffusion techniques or the like. A wiring 4 and a wiring 5 are connected through a contact hole 16. |
