| 摘要 |
PURPOSE:To improve the coatability of an aluminum wiring on the sidewall of a contact hole, to reduce the probability of the disconnection of the aluminum wiring in a contact section and to obtain an integrated circuit having high reliability by forming an aluminum wiring layer in the contact section through two-time sputterings. CONSTITUTION:A contact hole is shaped to an inter-layer insulating film 2 formed onto a semiconductor substrate 1, and first aluminum 3a is sputtered onto the inter-layer insulating film 2. Said aluminum 3a adhering on sections except the contact hole in said inter-layer insulating film 2 is removed through photoetching. Second aluminum 4c is sputtered onto said inter-layer insulating film 2, and the aluminum 4c is patterned, thus shaping a wiring layer. First aluminum 3a is sputtered while heating the substrate 1, a resist layer is formed onto the aluminum 3a, and a resist in sections except the contact hole section is removed through a photolithographic technique. Aluminum 3a except the contact hole is removed while using a resist 4b as a mask.
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