| 摘要 |
A method for manufacturing a semiconductor device and a display device thereof are provided to suppress error due to intensity deviation of an energy beam between radiation optical systems by performing the annealing using the radiation optical systems. In annealing for radiating an energy beam using plural radiation optical systems, a radiation area of energy beam is divided into single beam radiation areas(11A,11B) and a boundary area(12AB). The single beam radiation areas are individually radiated by energy beams from respective radiation optical systems. The boundary area implemented between adjacent single beam radiation areas is radiated by energy beams from both radiation optical systems for radiating beams toward the single beam radiation areas. The boundary area is divided into a first radiation area(PA) radiated by one of the both radiation optical systems and a second radiation area(PB) radiated by the other of the both radiation optical systems. The first and second radiation areas and thin film transistor forming areas are disposed so as to form a mixed area of thin film transistor forming areas, which are radiated beams by the first and second radiation areas, on the boundary area. |
