发明名称 METHOD FOR FORMING THIN FILM OF Sn-Ag-Cu TERNARY ALLOY
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an Sn alloy thin film which has adequate solderability (low melting point) while preventing a whisker from forming, and has thin and uniform thickness. SOLUTION: The method for forming the thin film of the Sn-Ag-Cu ternary alloy on a substrate comprises immersing the substrate into a plating bath and electroplating it to form the thin film of the Sn-Ag-Cu ternary alloy on the whole area or a part of the substrate. The plating bath includes at least an Sn compound, an Ag compound, a Cu compound, an inorganic chelating agent and an organic chelating agent. The inorganic chelating agent is blended at a ratio of 1 to 300 pts. by mass with respect to the Ag compound of 1 pt. by mass, and the organic chelating agent is blended at a ratio of 1 to 200 pts. by mass with respect to the Cu compound of 1 pt. by mass. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006118001(A) 申请公布日期 2006.05.11
申请号 JP20040307115 申请日期 2004.10.21
申请人 FCM KK 发明人 MIURA SHIGENORI
分类号 C25D3/60;C25D7/00;C25D17/10 主分类号 C25D3/60
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