发明名称 |
FAILURE TEST METHOD FOR SPLIT GATE FLASH MEMORY |
摘要 |
A failure test method of word line-bit line short circuit in a split gate flash memory is provided. A well leakage-current test is performed to identify a sector with a failed memory cell. After being programmed, memory cells in the sector undergo a first read operation to generate a first bit map of the sector. After being erased, these memory cells in the sector undergo a second read operation to generate a second bit map of the sector. The first bit map and the second bit map are overlaid to identify the actual address of the failed memory cell.
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申请公布号 |
US2006098505(A1) |
申请公布日期 |
2006.05.11 |
申请号 |
US20040904342 |
申请日期 |
2004.11.04 |
申请人 |
CHO CHIH-HUNG;TSAI MING-SHIAHN;HSU SHIH-TSE;LIN LIH-WEI |
发明人 |
CHO CHIH-HUNG;TSAI MING-SHIAHN;HSU SHIH-TSE;LIN LIH-WEI |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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