| 摘要 |
FIELD: high-power semiconductor devices. ^ SUBSTANCE: proposed symmetrical high-value semiconductor pulsed voltage limiter characterized in low dynamic resistance and enhanced avalanche breakdown energy has m similar balanced low-voltage limiters series-interconnected to form pile, each limiter incorporating base region of given polarity of conductivity, as well as abutting top and bottom emitter regions of reverse polarity of conductivity; each limiter has edge chamfer for protection against surface breakdown. Ohmic contacts are made for top emitter region of low-voltage limiter uppermost in pile and for bottom emitter region of bottom low-voltage limiter. Each low-voltage limiter has additional diffusion regions on periphery of all top and bottom emitter regions, their polarity of conductivity being reverse to that of base region so that avalanche-producing voltage in p-n junction of these regions (UBR 7.8) and maximal voltage across p-n junctions of top and bottom regions under avalanche breakdown conditions (UBRSM 2.3) are interrelated by expression UBR 7.8 > UBRSM 2.3; additional diffusion regions are made so that top and bottom emitter regions of all symmetrical low-voltage limiters are of same size and are equal to emitter region uppermost in low-voltage limiter pile, their centers being disposed on same symmetry axis. ^ EFFECT: enhanced avalanche breakdown energy of symmetrical high-voltage limiters. ^ 1 cl, 4 dwg, 1 tbl |
