发明名称 |
Low thermal budget fabrication method for a mask read only memory device |
摘要 |
A low thermal budget fabrication method for a mask ROM is described. The method includes providing a substrate having a gate oxide layer thereon. A first conductive layer is formed on the gate oxide layer. A plurality of bit lines is formed in the substrate. A second conductive layer is then formed on the first conductive layer, followed by forming a plurality of ROM codes in the substrate.
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申请公布号 |
US7442610(B2) |
申请公布日期 |
2008.10.28 |
申请号 |
US20020156323 |
申请日期 |
2002.05.24 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HUANG SHUI-CHIN;PAN JEN-CHUAN |
分类号 |
H01L21/8234;H01L21/8246;H01L27/112 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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