发明名称 |
PATTERN FORMING METHOD, IMPRINT MOLD AND PHOTOMASK |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method suppressing drawing abnormality of a pattern due to charges and suitable for forming a multi-level fine three-dimensional structural pattern. <P>SOLUTION: The pattern forming method is characterized in that a resin layer comprising a resin having conductivity and insoluble with water is formed on a substrate having level differences. Because the resin layer burying the level differences is insoluble with water and has conductivity, the resin layer acts as an antistatic layer. Upon patterning by use of a charged particle beam, occurrence of drawing abnormality in a resist on the resin layer can be suppressed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2008298827(A) |
申请公布日期 |
2008.12.11 |
申请号 |
JP20070141516 |
申请日期 |
2007.05.29 |
申请人 |
TOPPAN PRINTING CO LTD |
发明人 |
NEGISHI YOSHIYUKI;FUKUGAMI NORIHITO |
分类号 |
G03F7/20;B29C59/02;B81C1/00;G03F1/40;G03F1/68;G03F1/80;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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