| 摘要 |
<P>PROBLEM TO BE SOLVED: To effectively evade the generation of scratches or the like on a wafer back surface caused by the chipping of a wafer or the like while maintaining the service life and grinding characteristics of a rotary grinding stone for finish grinding in a practical range in a manufacturing process of a semiconductor integrated circuit device, in a back grinding process for grinding the back surface of the wafer and turning it to a desired thickness and a stress relief process integrated with it for details. <P>SOLUTION: In the finish grinding in the back grinding process serving also as the stress relief process, the finish grinding is performed while pressing a grinding stone 105 for toothing to a grinding stone 107 for grinding only in a spark-out period in which the wafer back surface is polished in a rotating state from the finish grinding basically. <P>COPYRIGHT: (C)2009,JPO&INPIT |
