发明名称 |
Techniques for Layer Transfer Processing |
摘要 |
Techniques for the fabrication of semiconductor devices are provided. In one aspect, a layer transfer structure is provided. The layer transfer structure comprises a carrier substrate having a porous region with a tuned porosity in combination with an implanted species defining a separation plane therein. In another aspect, a method of forming a layer transfer structure is provided. In yet another aspect, a method of forming a three dimensional integrated structure is provided.
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申请公布号 |
US2008280416(A1) |
申请公布日期 |
2008.11.13 |
申请号 |
US20080180827 |
申请日期 |
2008.07.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;FOGEL KEITH EDWARD;FURMAN BRUCE KENNETH;PURUSHOTHAMAN SAMPATH;SADANA DEVENDRA K.;TOPOL ANNA WANDA |
分类号 |
H01L21/30;H01L21/00;H01L21/762;H01L21/822;H01L29/04 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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