Superlattice strain relief layer for semiconductor devices

摘要

A semiconductor light emitting diode structure of a type formed on a substrate is provided, wherein said substrate is removed and said semiconductor light emitting diode is bonded to a heat sink structure. The structure further comprises first and second index guiding layers and a multiple quantum well heterostructure of a composition including at least 25% aluminum, formed between said first and second index guiding layers, wherein said multiple quantum well heterostructure is substantially free from structural cracks.