| 摘要 |
A ferromagnetic memory cell is disclosed. The cell includes a bit ( 10 ), made of a ferromagnetic material, having a remnant polarity. The cell also includes a read drive line ( 20 ) coupled to a first portion of the bit ( 10 ), to feed a current into the bit ( 10 ). A sense conductor ( 30 ) is coupled to a second portion of the bit ( 10 ), to receive the current from the bit ( 10 ). The current conducted through the bit ( 10 ) is responsive to the polarity of the bit ( 10 ). A method is also disclosed for determining the magnetic polarity of a ferromagnetic bit ( 10 ). In this method, a bit ( 10 ) is provided that is made of ferromagnetic material and has a remnant polarity. An input current ( 50 ) is fed into the bit ( 10 ) through a read drive line ( 20 ) coupled to a first portion of the bit ( 10 ). An output current ( 60 ) is received from the bit ( 10 ) through a sense conductor ( 30 ) coupled to a second portion of the bit ( 10 ). The current conducted through the bit ( 10 ) is responsive to the polarity of the bit ( 10 ). A variance between the input current ( 50 ) and output current ( 60 ) is then sensed, from which the magnetic polarity of the bit ( 10 ) is determined.
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