| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<p>A plurality of CNT patches for dividing the CNT channel layer of a transistor in the orthogonal direction of the channel are used to connect between the source and drain. The probability with some of the CNT patches as semiconducting CNT patches becomes higher by composing the CNT channel layer of the CNT patches. A transistor having an excellent on/off ratio can be obtained by comprising part of the CNT patches constituting the channel layer as the semiconducting CNT patches.</p> |
| 申请公布号 |
WO2008129992(A1) |
申请公布日期 |
2008.10.30 |
| 申请号 |
WO2008JP57373 |
申请日期 |
2008.04.09 |
| 申请人 |
NEC CORPORATION;ISHIDA, MASAHIKO |
发明人 |
ISHIDA, MASAHIKO |
| 分类号 |
H01L29/06;H01L29/786;H01L21/336 |
主分类号 |
H01L29/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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