| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor modeling to make the performance of a finally formed transistor to be close to that of simulated by the simulation model. SOLUTION: In a system for modeling an integrated circuit having at least an insulated gate field effect transistor, this system includes a generation means (MLB) for defining a parameter showing a mechanical stress applied to a transistor active region, and a processing means (MT) for determining at least a plurality of electrical parameter (P) for a transistor by considering the stress parameter. COPYRIGHT: (C)2009,JPO&INPIT |
