发明名称 LASER IRRADIATION APPARATUS, LASER IRRADIATION METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 Providing a method and apparatus for efficiently irradiating a uniform laser light on an irradiation surface even when a laser light of high coherence or a large size substrate is used. The laser irradiation apparatus of the invention comprises a laser; means for dividing a laser light emitted from the laser into plural laser beams; means for synthesizing the laser beams on the irradiation surface or place in the vicinity thereof thereby forming a laser light having a periodical energy distribution; and means for moving the substrate relative to the laser light. Such a laser irradiation apparatus may be used to anneal the overall surface of a semiconductor film.
申请公布号 US2008252978(A1) 申请公布日期 2008.10.16
申请号 US20080118340 申请日期 2008.05.09
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO
分类号 G02B27/10;B23K26/00;G02B27/00;G02B27/09;H01L21/02 主分类号 G02B27/10
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