| 摘要 |
Embodiments of the present invention are generally directed towards nano emission devices. Nano emission devices can include, for example, diodes (1200), N-type transistors (100, 200, 250, 500, 600, 900), P-type transistors (250, 300, 500, 600, 800, 900, 1500), and combined N- and P- type nano emission transistors (400). Nano emission devices can include multiple emitters, collectors, gates and the like to form more complex nano emission devices (1600, 1900, 2200). Nano emission devices may be connected together to form various circuits, including for example, logic gates (1402, 1404, 1408), memory cells (1406), amplifiers, and the like. Nano emission devices may be fabricated in two- and three-dimensional integrated circuits (1700, 2300, 2400). Methods of fabricating (700, 750, 1100, 2500, 2600) nano emission devices and electronic circuits are also described.
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