| 摘要 |
A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer section 24 based on a double heterostructure in which a first-conductivity-type cladding layer 6, an active layer 5 and an second-conductivity-type cladding layer 4, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0<=x<=1, 0<=y<=1), are stacked in this order, and having the (100) surface appeared on the main surface thereof, and GaP transparent semiconductor layers 20, 90 stacked on the light emitting layer section 24 as being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer. Accordingly, there can be provided a method of fabricating a light emitting device having the AlGaInP light emitting layer section and the GaP transparent semiconductor layers, less causative of failures such as edge chipping during the dicing. |
