摘要 |
A semiconductor memory device and a method for operating the same are provided to reduce current consumption by controlling a delay locked loop circuit in a power down mode. A delay locked clock generation circuit generates a delay locked clock by receiving a system clock. A mode signal generation part generates an active precharge power down mode signal enabled in an active precharge power down mode. A delay locking operation control part(220) controls the delay locked clock generation circuit to enable the delay locking operation of the delay locked clock generation circuit at every expected cycle, in response to the active precharge power down mode signal. The delay locking operation control part controls the delay locked clock generation circuit by dividing the system clock.
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