发明名称 METHOD FOR MANUFACTURING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal through which single crystal having a high oxygen concentration above a given concentration over the entire length and having a uniform in-plane oxygen concentration distribution can be obtained. SOLUTION: The method comprises rotating a crucible 3 at a rotating speed in the range of between 0.2-5.0 rpm in a state where the reduction ratio of the strength of the magnetic field directing from the lower part to the upper part along the direction of the pulling-up axis of the single crystal to at least 0.4 Gauss/mm in the region from the solid-liquid interface M2 that is the boundary plane between the single crystal C and the melt liquid M to at least a given depth d1 in the melt liquid when pulling-up the single crystal C, and rotating the single crystal C in the reverse direction of the rotating direction of the crucible 3 at a rotating speed of at least 8 rpm. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008189523(A) 申请公布日期 2008.08.21
申请号 JP20070026259 申请日期 2007.02.06
申请人 COVALENT MATERIALS CORP 发明人 MINAMI TOSHIRO
分类号 C30B29/06;C30B15/20 主分类号 C30B29/06
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