发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of transferring a layer to be transferred to a transfer destination substrate by a simple method. <P>SOLUTION: The manufacturing method of the semiconductor device includes a process of bonding the layer 12 to be transferred arranged on a first substrate (transfer origin substrate 10) and a second substrate (first transfer destination substrate 20) and a process of peeling the layer 12 to be transferred from the first substrate 10. The process of bonding the layer 12 to be transferred and the second substrate 20 includes a process of arranging a frame-like sealing material 22 on the second substrate 20, a process of arranging an adhesive 23 in an area within the frame of the sealing material 12, and a process of piling up the surface where the layer 12 to be transferred is arranged of the first substrate 10 and the second substrate 20 through the sealing material 22 and the adhesive 23. The sealing material 22 and the adhesive 23 are constituted of mutually incompatible materials. Also, the sealing material 22 and the adhesive 23 are not hardened from the process of arranging the sealing material 22 to the process of piling up the first substrate 10 and the second substrate 20. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008187094(A) 申请公布日期 2008.08.14
申请号 JP20070020875 申请日期 2007.01.31
申请人 SEIKO EPSON CORP 发明人 KAMINE TETSUJI
分类号 H01L21/02;H01L21/336;H01L27/12;H01L29/786 主分类号 H01L21/02
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