| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a FLOTOX-type EEPROM which adopts a double-cell method for high-reliability design and has reduced cell areas. <P>SOLUTION: The FLOTOX-type EEPROM adopting the double-cell method includes a pair of floating gates 25a and 25b, a pair of tunnel windows 30a and 30b, a pair of sources 26a and 26b, a common control gate 31, a common select gate 32, and a common drain 27. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
