| 摘要 |
A thin film transistor device includes a semiconductor layer including a source region, a drain region and a channel region formed above a substrate, a metal film formed in a prescribed area on the semiconductor layer, a gate insulating film formed on the metal film and the semiconductor layer, a gate electrode, an interlayer insulating film, and a line electrode. The metal film is formed on the source region and the drain region of the semiconductor layer, the area being at least a bottom of the contact hole. The thickness of the semiconductor layer in a region on which the metal film is not formed is smaller than the thickness of the semiconductor layer in a region on which the metal film is formed.
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