PRODUCTION METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To restrain production of an interface defect at the time of forming an insulating film and to reduce the produced defect. SOLUTION: The method comprises a step of forming a nitride film on the surface of a semiconductor substrate with the semiconductor substrate placed in a first atmosphere containing a first nitriding gas for nitriding the surface of a semiconductor substrate and a first diluting gas substantially unreactive with the semiconductor substrate with the ratio of the sum of the partial pressure of the first diluting gas and the partial pressure of the first nitriding gas and the partial pressure of the first nitriding gas is 5 or more and the total pressure is 40 Torr or less, and a step of forming a first acid nitride layer between the semiconductor substrate and the nitride film and forming a second nitride layer on the surface of the nitride film with the semiconductor substrate having the nitride film formed on the surface placed in a second atmosphere containing an oxidation gas having a bonding energy of the oxygen atom in a range of 1 eV-4 eV and a second diluting gas substantially unreactive with the semiconductor substrate. COPYRIGHT: (C)2008,JPO&INPIT