| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of uniformly operating a field effective transistor (FET) and suppressing the decline of a breakdown voltage by reducing the influence on the FET by the change of the width of a recess part due to crystal orientation in the FET having a crank type multigate structure. SOLUTION: Between ohmic electrodes 2, gate fingers 4 and 5 are arranged in a crank shape. Also, an n-type GaAs layer 1 with the recess part is provided between the ohmic electrodes 2, and the gate fingers 4 and 5 are formed in the recess part. Then, the n-type GaAs layer 1 between the gate fingers 4 and 5 is provided continuously from the input end to the terminating end of a gate electrode. COPYRIGHT: (C)2008,JPO&INPIT |
