| 摘要 |
<p>A method for manufacturing a semiconductor device and an exposure apparatus for the same are provided to increase a scanning speed and improve productivity by reducing adhesive force between an immersion solution of an immersion part and a photosensitive layer of a wafer. An immersion unit(102) for storing an immersion solution is positioned between a projection lens(100) and a wafer stage(108) in order to perform an exposure process. A lithography method includes a process of condensing an exposure light source irradiated through the projection lens and controlling magnifying power, and a process of transmitting the exposure source to a transparent electrode layer(110) and the immersion unit. The transparent electrode layer is made of one of indium tin oxide, indium oxide, tin oxide, zinc oxide, and indium zinc oxide.</p> |
