发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device is provided to increase an area that exposes a lower interconnection as compared with a via hole circularly exposing the lower interconnection by forming a via hole having a shape in which at least one rectangular opening crosses another. A lower interconnection(120) is extended in one direction on a semiconductor substrate. The lower interconnection is covered with an interlayer dielectric. A via hole exposes a predetermined region of the lower interconnection, composed of at least one rectangular opening in the interlayer dielectric. A conductive material is filled in the via hole to form a via(140a) electrically connected to the lower interconnection. An upper interconnection(150) crosses the lower interconnection on the interlayer dielectric, coming in contact with the via. At least two rectangular openings can cross each other to form the via hole.
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申请公布号 |
KR20080057640(A) |
申请公布日期 |
2008.06.25 |
申请号 |
KR20060131200 |
申请日期 |
2006.12.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, DEOK SUNG |
分类号 |
H01L21/28;H01L21/3205;H01L21/786 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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