| 摘要 |
<P>PROBLEM TO BE SOLVED: To lower a process temperature for an SOQ substrate manufacturing process for reducing the degree of the surface roughness of an SOQ film, and to provide a high-quality SOQ substrate. <P>SOLUTION: Hydrogen ions are implanted to a surface of a single-crystal Si substrate 10 via an oxide film 11 to uniformly form an ion implanted layer 12 at a predetermined depth (average ion implantation depth L) from the surface of the single crystal Si substrate 10, and a bonding surface of the substrate is subjected to plasma treatment or ozone treatment. An external shock is applied onto the single-crystal Si substrate 10 and quartz substrate 20, which are bonded together, to mechanically delaminate a silicon film 13 from a single-crystal silicon bulk 14. In this way, the SOQ film 13 is formed on the quartz substrate 20 via the oxide film 11. For further smoothing out the SOQ film surface, hydrogen heat treatment is performed at a temperature of 1,000°C or lower, below the quartz glass transition point. When measuring surface roughness of an SOQ film, after performing hydrogen heat treatment on a sample having a surface roughness of about 5 nm in terms of RMS average value, immediately after delamination, a satisfactory measurement results of 0.3 nm or smaller in terms of RMS average value is been obtained. <P>COPYRIGHT: (C)2008,JPO&INPIT |
