SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device is provided to increase a threshold voltage without causing the increase of a junction leakage by using a reaction of a high dielectric material and a conductive material in a first region of a first gate structure. A semiconductor substrate(100) includes first and second regions. A first gate structure(110) includes a first gate insulation layer and a first gate electrode formed in the first region of the semiconductor substrate. The first gate insulation layer includes a first dielectric material and a second dielectric material with a higher dielectric constant than that of the first dielectric material. The first gate electrode comes in contact with the second dielectric material. A second gate structure(120) includes a second gate insulation layer and a second gate electrode formed in the second region of the semiconductor substrate. The first gate insulation layer can include a lower gate insulation layer made of the first dielectric material and an upper gate insulation layer made of the second dielectric material wherein the upper gate insulation layer is formed on the lower gate insulation layer.