| 摘要 |
<p>A method of forming a semiconductor device having opening portions is provided to simplify a process for manufacturing the semiconductor device by minimizing an exposure process. A method of forming a semiconductor device having opening portions includes: etching a second inter layer dielectric exposed to guide opening portions by a first selective etch process(S200); etching a second etch blocking layer, a first inter layer dielectric, a first etch blocking layer, and a peripheral capping insulation pattern exposed by a non-selective etch process(S210); etching at least remained parts of the first inter layer dielectric by a second selective etch process(S220); etching the first etch blocking layer exposed under second and third guide opening portions(S230); and removing a buffer insulation layer exposed under second and third guide opening portions(S240).</p> |
