| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition suitable for use to polish a silicon dioxide film, particularly for use to polish a silicon dioxide film formed on a silicon substrate or a polysilicon film, and to provide a polishing method by means of such a polishing composition. <P>SOLUTION: The polishing composition comprises a colloidal silica having a degree of association of more than 1, and an acid, and has a pH of 1 to 4. The acid is preferably at least one selected from carboxylic acid and sulfonic acid. This polishing composition preferably further contains an anionic surfactant. The anionic surfactant is preferably a sulfuric acid ester salt or a sulfonate. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
