| 摘要 |
A method of manufacturing a semiconductor single crystal by Czochralski technology, and a single crystal ingot and a wafer manufactured by the method are provided to increase a prime length of the single crystal and improve productivity, since a specific resistance profile is expanded in a longitudinal direction of the crystal with increased effective segregation coefficient of dopant. A method of manufacturing a semiconductor single crystal by Czochralski technology for growing a semiconductor single crystal(C) by dipping a seed crystal into a melt(SM) of a semiconductor raw material and dopant contained in a crucible(10) and gradually lifting the crystal seed while it is being rotated, the method is characterized by that a cusp-type asymmetric magnetic field(Gupper,Glower) having different upper and lower magnetic field intensities based on ZGP(Zero Gauss Plane) with 0 vertical component of the magnetic field is applied to the crucible to expand a specific resistance profile, that is theoretically calculated in a longitudinal direction of the crystal, in a longitudinal direction of the crystal.
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