发明名称 MEMBER FOR SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING MEMBER FORMING LIQUID FOR SEMICONDUCTOR DEVICE AND MEMBER FOR THE SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE, MEMBER FORMING LIQUID FOR SEMICONDUCTOR DEVICE AND PHOSPHOR COMPOSITION USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a member for a semiconductor device having proper resistance to heat, light resistance, film formation ability and adhesion, capable of sealing the semiconductor device without causing cracks or peelings. <P>SOLUTION: A member for a semiconductor device has a heating weight reduction by a method (I) of 50 wt.% or lower, and a peeling rate by a method (II) of 30% or lower. In the method (I), a member fragment of 10 mg is heated from 35&deg;C to 500&deg;C, at a temperature increase rate of 10&deg;C per minute, whole letting air through at a rate of 200 ml per minute by a thermogravimetric and differential thermal measurement apparatus to measure weight reduction. In the method (II), where operation is performed for 10 members and a peeling rate is calculated includes: dropping and hardening formation liquid in a copper cup with a silver-coated surface, having a diameter of 9 mm and a recessed part of 1 mm in depth, to obtain a member for a semiconductor device; moisturizing the member at a temperature of 85&deg;C and a humidity of 85% for 20 hours; warming the moisturized member from room temperature to a temperature of 260&deg;C for 50 seconds and keeping at a temperature of 260&deg;C for 10 seconds; cooling the member to the room temperature; and observing whether peeling from the cup occurs. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008078638(A) 申请公布日期 2008.04.03
申请号 JP20070216452 申请日期 2007.08.22
申请人 MITSUBISHI CHEMICALS CORP 发明人 KATOU HANAKO;MORI HIROSHI;KOBAYASHI HIROSHI;TONOMURA TASUKU
分类号 H01L33/32;H01L33/50;H01L33/54;H01L33/56;H01L33/62 主分类号 H01L33/32
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