发明名称 |
A process for eliminating precipitates from a semiconductor II-VI material by annealing. |
摘要 |
<p>Removing precipitates from a solid II-VI semiconductor material comprises heating the material to a temperature T between the II-VI/VI eutectic temperature and the maximum congruent sublimation temperature of the material, keeping the material at temperature T until the precipitates have been eliminated and cooling the material to room temperature at a rate corresponding to the material's congruent sublimation line. All steps are performed under an inert gas stream.</p> |
申请公布号 |
EP1897965(A1) |
申请公布日期 |
2008.03.12 |
申请号 |
EP20070115691 |
申请日期 |
2007.09.05 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
PELLICIARI, BERNARD |
分类号 |
C22F1/16;C30B29/48;C30B33/02;H01L21/477 |
主分类号 |
C22F1/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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