| 发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD FOR FORMING THE SAME |
| 摘要 |
<p>A non-volatile memory device and a manufacturing method thereof are provided to form a zirconium oxide layer serving as a tunneling insulating layer, a floating gate and a interlayer dielectric, through a single process. A semiconductor substrate(100) is prepared, and then a ZrOx layer(110) having zirconium of high contents is formed on the substrate, in which 0<x<2. A gate electrode is formed on the ZrOx layer. The step of forming the ZrOx layer includes simultaneously forming a ZrO2 layer and zirconium nano-particles dispersed in the ZrO2 layer. The ZrOx layer is formed through a reactive sputtering process using an argon gas and an oxygen gas, in which partial pressure of the oxygen gas is 5 to 30 %.</p> |
| 申请公布号 |
KR20080022404(A) |
申请公布日期 |
2008.03.11 |
| 申请号 |
KR20060085786 |
申请日期 |
2006.09.06 |
| 申请人 |
KONKUK UNIVERSITY INDUSTRIAL COOPERATION CORP. |
发明人 |
PARK, BAE HO;LEE, JIN HO;HWANG, IN ROK;HONG, SA HWAN |
| 分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
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