| 摘要 |
A film formation method and apparatus for a semiconductor process are provided to form a silicon oxide layer with good thickness uniformity by repeating a series of cycles of preliminary process step, an absorption step and an oxidation step. In a process region in which a first process gas comprising a film source element and not an amino group, a second process gas comprising an oxidation gas, and a third process gas comprising a preliminary process gas are selectively supplied, an oxide layer is formed on a substrate through chemical vapor deposition. A first process includes an excitation period in which the third process gas excited by an excitation device is supplied. In a second process, the first process gas is supplied, and thus the film source element is absorbed on a surface of the substrate. A third process includes an excitation period in which the second process gas excited by the excitation device is supplied, and thus the film source element absorbed on the surface of the substrate is oxidized by a radical of the generated oxidation gas.
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