发明名称 |
Method for fabricating semiconductor device |
摘要 |
The present invention relates to a method for fabricating a semiconductor device with a fine pattern even without decreasing a line width of a photoresist pattern. The method includes the steps of: forming a target etching layer on a substrate; forming a plurality of etch mask patterns with high pattern density in a first region and a low pattern density in a second region on the target etching layer; removing a native oxide layer grown on the target etching layer such that a line width of each etch mask pattern decreases in more extents in the second region than in the first region; and etching the target etching layer by using the plurality of etch mask patterns as a mask.
|
申请公布号 |
US7338906(B2) |
申请公布日期 |
2008.03.04 |
申请号 |
US20050114083 |
申请日期 |
2005.04.26 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
NAM KI-WON |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|