发明名称 |
THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor substrate to reduce the number of masks and the number of processes. SOLUTION: This thin film transistor substrate has: a first conductive layer 7 formed on a substrate 1; a diffusion prevention layer 2 formed on the first conductive layer 7; a semiconductor layer 3 formed on the diffusion prevention layer 2; a gate insulating layer 4 formed on the semiconductor layer 3; a second conductive layer 5 formed on the gate insulating layer 4; an inter-layer insulating layer 6 formed on the second conductive layer 5; and a third conductive layer 9 formed on the inter-layer insulating layer 6. The third conductive layer 9 penetrates the inter-layer insulating layer 6 and gate insulating layer 4 to reach the semiconductor layer 3 and also penetrates the gate insulating layer 4 and diffusion prevention layer 2 to reach the first conductive layer 7, and then the semiconductor layer 3 and first conductive layer 7 are connected together through the third conductive layer 9. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008040234(A) |
申请公布日期 |
2008.02.21 |
申请号 |
JP20060215693 |
申请日期 |
2006.08.08 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
NISHIURA ATSUNORI;IMAMURA TAKUJI |
分类号 |
G09F9/30;G02F1/1362;H01L29/786 |
主分类号 |
G09F9/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|