发明名称 THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a thin film transistor substrate to reduce the number of masks and the number of processes. SOLUTION: This thin film transistor substrate has: a first conductive layer 7 formed on a substrate 1; a diffusion prevention layer 2 formed on the first conductive layer 7; a semiconductor layer 3 formed on the diffusion prevention layer 2; a gate insulating layer 4 formed on the semiconductor layer 3; a second conductive layer 5 formed on the gate insulating layer 4; an inter-layer insulating layer 6 formed on the second conductive layer 5; and a third conductive layer 9 formed on the inter-layer insulating layer 6. The third conductive layer 9 penetrates the inter-layer insulating layer 6 and gate insulating layer 4 to reach the semiconductor layer 3 and also penetrates the gate insulating layer 4 and diffusion prevention layer 2 to reach the first conductive layer 7, and then the semiconductor layer 3 and first conductive layer 7 are connected together through the third conductive layer 9. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008040234(A) 申请公布日期 2008.02.21
申请号 JP20060215693 申请日期 2006.08.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIURA ATSUNORI;IMAMURA TAKUJI
分类号 G09F9/30;G02F1/1362;H01L29/786 主分类号 G09F9/30
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