发明名称 THICK-FILM RESIST WATER PROCESS AND ITS APPARATUS
摘要 PROBLEM TO BE SOLVED: To faithfully and sharply reproduce a circuit pattern of an exposing mask. SOLUTION: The thick-film resist process coats the surface of a silicon substrate (S) with a resist (L), exposes the resist (L) to a circuit forming pattern to print the pattern thereto, and develops the resist (L) printed with the circuit pattern. The resist (L) is exposed after giving a water content to the resist (L), thereby indeneketen is quickly and massively formed by the water content of the resist (L), and the indenketene is changed to indenecarbonate soluble to an alkali developing solution due to the water content of the resist (L), thus achieving extremely faithful exposure/development on an exposing mask (M). COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008041874(A) 申请公布日期 2008.02.21
申请号 JP20060213199 申请日期 2006.08.04
申请人 M SETEK CO LTD 发明人 MATSUMIYA RITSUO;NAGASAWA KAZUO;MATSUI KAZUO
分类号 H01L21/027;G03F7/022;G03F7/38 主分类号 H01L21/027
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