An antenna of a plasma processing apparatus is provided to form plasma having a uniform density required in a plasma process of a substrate. An antenna of a plasma processing apparatus includes a first wiring group(100) formed from an internal region(10) to a middle region(20). A second wiring group(200) is formed from the middle region to an outline region(30). The first wiring group transmits an electric power of a first radio frequency power source from the middle region to the internal region. The second wiring group transmits an electric power of a second radio frequency power source from the middle region to the outline region. The first wiring group includes a first wiring(110) formed from the middle region to the internal region. A second wiring(120) is arranged according to a center point of the antenna for the first wiring to be rotated by 180°.
