发明名称 |
Method of forming a mask layout and layout formed by the same |
摘要 |
A mask layout forming method includes designing an original layout in which a diagonal pattern of a first polygon is repeatedly arranged in a diagonal direction relative to a vertical-axis direction. Opposite edge sides of the diagonal pattern of the first polygon are corrected such that second polygons extending in a horizontal-axis direction are stacked at the opposite edge sides of the diagonal pattern of the first polygon to form a stair-shaped layout. The polygons are fractured in the horizontal-axis direction to provide data associated with the corrected layout to an electron beam exposure system. The diagonal pattern of the first polygon defines an active region and a device isolation layer along a 6F<SUP>2 </SUP>cell layout or a 4F<SUP>2 </SUP>cell layout.
|
申请公布号 |
US7332252(B2) |
申请公布日期 |
2008.02.19 |
申请号 |
US20060618639 |
申请日期 |
2006.12.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KANG CHUN SOO;NAM BYOUNG SUB |
分类号 |
G03F9/00;G03F1/36;G03F1/68;G03F1/70;G03F1/78;H01L21/027;H01L21/8242;H01L27/108 |
主分类号 |
G03F9/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|