| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a MOS transistor structure in which an n-channel gate electrode and a p-channel gate electrode are mixed in a piece of gate electrode, wherein its np boundary can suppress influences given to a MOS transistor. SOLUTION: A p-channel metal gate electrode 22P of a PMOS transistor is composed of a first silicide phase, an n-channel metal gate electrode 22N of an NMOS transistor is composed of a second silicide phase, and a metal gate electrode 22B on an element isolation insulating film 11 positioned at a boundary between an n-well 12N and a p-well 12P is composed of a third silicide phase. COPYRIGHT: (C)2008,JPO&INPIT
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