Wiring structure of a semiconductor device, method of forming the wiring structure, non-volatile memory device including the wiring structure, and method of manufacturing the non-volatile memory device

摘要

A wiring structure of a semiconductor device may include an insulation interlayer on a substrate, the insulation interlayer having a linear first trench having a first width and a linear second trench having a second width, the linear second trench being in communication with a lower portion of the linear first trench, the first width being wider than the second width, and a conductive layer pattern in the linear first and second trenches.