| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device including a film formation step of heating a semiconductor substrate sucked to a susceptor, and forming a film on the heated semiconductor substrate; wherein a film with good film quality is formed on an upper surface side of the semiconductor substrate, and yield of the semiconductor substrate is improved by preventing formation of the film on a lower surface side of the substrate. SOLUTION: The susceptor 17 sucks a semiconductor substrate 22 corresponding to a first region D located inside a half of a radius R<SB>1</SB>of the semiconductor substrate 22 from the center of the substrate 22, and a semiconductor substrate 22 corresponding to a second region E located outside the first region D. A CVD film 23 is formed on the semiconductor substrate 22 heated by a heater 16 to be kept at a predetermined temperature T<SB>x</SB>. COPYRIGHT: (C)2008,JPO&INPIT |
