| 摘要 |
An aluminum nitride sintered body comprising crystal grains of an average grain size (D<SUB>50</SUB>) of 0.1 to 2.5 mum, and having a pore area ratio of not larger than 1x10<SUP>-7</SUP>, a pore density of not larger than 0.05 pores/mm<SUP>2 </SUP>of pores having diameters of not smaller than 1 mum, and a Vickers' hardness in a range of 14 to 17 GPa. The aluminum nitride sintered body has a very small pore density despite of its relatively small crystal grain size, features excellent strength and mirror machinability, and is particularly useful as a material for circuit substrates on which fine wiring patterns are formed.
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